| PART |
Description |
Maker |
| TBB1016 TBB1016RMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| HN3C01F |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| HN3C01FU |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| S-AV10H S-AV10L |
VHF RF Power Amplifier Module
|
TOSHIBA[Toshiba Semiconductor]
|
| BGY145C |
VHF amplifier module 174 MHz - 200 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| S-AV36A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 80-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| S-AV23AH S-AV23AL S-AV23AVH |
(S-AV23xx) VHF Power Amplifier Module
|
Toshiba
|
| 2SC2420 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 2SC2782 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
